Electrical contact technologies for A (III) B (V) semiconductor epitaxial layers used in infrared detectors
|Project duration:||02.12.2019 – 31.05.2021|
|Contractor:||Military University of Technology|
|Overall budget:||473 550,00 PLN|
|EU co-funding:||327 250,00 PLN|
The subject of the project is the development of a significantly improved, innovative technology for the production of electrical contacts and its implementation as a production stage of infrared (IR) detectors based on diode semiconductor structures of group A (III) B (V) elements with an InAsSb absorber.
The final result of the entire project, after the implementation of this technology into business, will be the launch of a family of infrared detectors based on semiconductor structures from group A (III) B (V) elements with parameters competing with HgCdTe.