Electrical contact technologies for A (III) B (V) semiconductor epitaxial layers used in infrared detectors
Agreement no.: POIR.02.03.02-14-0085/19-00
Duration: 02/12/2019 – 16/04/2021
Overall budget: PLN 473,550.00
Eligible costs: PLN 385,000.00
EU co-funding: PLN 327,250.00
Contractor: Military University of Technology
The subject of the project is the development of a significantly improved, innovative technology for the production of electrical contacts and its implementation as a production stage of infrared (IR) detectors based on diode semiconductor structures of group A (III) B (V) elements with an InAsSb absorber.
The final result of the entire project, after the implementation of this technology into business, will be the launch of a family of infrared detectors based on semiconductor structures from group A (III) B (V) elements with parameters competing with HgCdTe.