Electrical contact technologies for A (III) B (V) semiconductor epitaxial layers used in infrared detectors

Project duration: 02.12.2019 – 31.05.2021
Contractor: Military University of Technology
Overall budget: 473 550,00 PLN
EU co-funding: 327 250,00 PLN

Project description:

The subject of the project is the development of a significantly improved, innovative technology for the production of electrical contacts and its implementation as a production stage of infrared (IR) detectors based on diode semiconductor structures of group A (III) B (V) elements with an InAsSb absorber.

The final result of the entire project, after the implementation of this technology into business, will be the launch of a family of infrared detectors based on semiconductor structures from group A (III) B (V) elements with parameters competing with HgCdTe.