Electrical contact technologies for A (III) B (V) semiconductor epitaxial layers used in infrared detectors
| POIR.02.03.02-14-0085/19-00 | |
| Project duration: | 02.12.2019 – 31.05.2021 |
| Contractor: | Military University of Technology |
| Overall budget: | 473 550,00 PLN |
| EU co-funding: | 327 250,00 PLN |
Project description:
The subject of the project is the development of a significantly improved, innovative technology for the production of electrical contacts and its implementation as a production stage of infrared (IR) detectors based on diode semiconductor structures of group A (III) B (V) elements with an InAsSb absorber.
The final result of the entire project, after the implementation of this technology into business, will be the launch of a family of infrared detectors based on semiconductor structures from group A (III) B (V) elements with parameters competing with HgCdTe.
