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Techmatstrateg

8 June 2022

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Ongoing project

Photonics Integrated Circuits technologies for MIDIR (MIRPIC)

  • Agreement no.
  • Duration:
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  • Project coordinator:
  • Partners:
  • TECHMATSTRATEG-III/0026/2019-00
  • 1/04/2021-31/12/2024
  • PLN 29,255,381.61
  • PLN 26,564,942.41
  • VIGO Photonics S.A.
  • Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Warsaw University of Technology
  • Agreement no. TECHMATSTRATEG-III/0026/2019-00
  • Duration: 1/04/2021-31/12/2024
  • Overall budget: PLN 29,255,381.61
  • Co-funding: PLN 26,564,942.41
  • Project coordinator: VIGO Photonics S.A.
  • Partners: Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Warsaw University of Technology

The result of the project will be a “product innovation” in the form of Application Specific Photonic Integrated Circuits (ASPIC) designed to work in the mid-infrared range, MidIR (3-5.5 μm). In particular, different building blocks necessary to define ASPICs will be designed, manufactured and tested, which will allow to design, manufacture and test the parameters of the ASPIC demonstrator. The demonstrator will reflect the typical characteristics of integrated photonics, i.e. multi-channel, integration on a common substrate, electronic and optical interfaces, and packaging.

The Project is co-funded by the National Center for Research and Development under the TECHMATSTRATEG programme.

Finished project

Technologies of materials and structures for the detection of long-wave infrared radiation (LWIR)

  • Agreement no.
  • Duration:
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  • TECHMATSTRATEG1/347751/5/NCBR/2017
  • 01/01/2018-31/12/2020
  • PLN 7,078,906.00
  • PLN 7,078,906.00
  • PLN 6,490,261.00
  • Łukasiewicz Research Network – Institute of Microelectronics and Photonics
  • Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Military University of Technology, Rzeszow
  • Agreement no. TECHMATSTRATEG1/347751/5/NCBR/2017
  • Duration: 01/01/2018-31/12/2020
  • Project budget: PLN 7,078,906.00
  • Eligible costs: PLN 7,078,906.00
  • Co-funding: PLN 6,490,261.00
  • Project coordinator: Łukasiewicz Research Network – Institute of Microelectronics and Photonics
  • Consortium members: Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Military University of Technology, Rzeszow

The aim of the project is to develop the technology of materials and structures for the detection of long-wave infrared radiation (8-14 μm) at elevated temperatures (> 200 K). The given spectral range is important for many applications, including military (imaging, detection of trace amounts of combat gases), civil, medical, industrial (control and diagnostics), space (observation of the Earth from space, detection of trace amounts of substances) and environmental (monitoring greenhouse gas emissions).

The subject of the project will be type-II semiconductor superlattices based on group III antimony compounds of the periodic table. This material is believed to be the successor of mercury cadmium telluride (HgCdTe), which is now widely used in infrared detection instruments.

The use of devices based on type-II superlattices will allow to produce more reliable, cheaper, lighter and energy-saving devices. The technology of antimonide superlattices allows flexibility in the design of materials and structures, however, due to the high degree of complexity, it requires high precision and control. That is why, despite the enormous progress in this field, in the last few years it has not been possible to produce devices that would work in the long-wave infrared range at elevated temperatures. Further research in this field is necessary.

In order to obtain the best materials and structures for infrared detection in the mentioned conditions, the superlattice technology will be developed and optimized. Both experimental techniques and advanced simulations will be used.

Finished project

Technologies of semiconductor materials for high power and high frequency electronics (WidePOWER)

  • Agreement no.
  • Duration:
  • Overall budget:
  • Co-funding:
  • Project leader:
  • Consortium members:
  • TECHMATSTRATEG1/346922/NCBR/2017
  • 01/12/2017-31/05/2021
  • PLN 20,200,000.00
  • PLN 19,700,000.00
  • Warsaw University of Technology
  • VIGO Photonics S.A., Wrocław University of Science and Technology, Łukasiewicz Research Network – Institute of Microelectronics and Photonics
  • Agreement no. TECHMATSTRATEG1/346922/NCBR/2017
  • Duration: 01/12/2017-31/05/2021
  • Overall budget: PLN 20,200,000.00
  • Co-funding: PLN 19,700,000.00
  • Project leader: Warsaw University of Technology
  • Consortium members: VIGO Photonics S.A., Wrocław University of Science and Technology, Łukasiewicz Research Network – Institute of Microelectronics and Photonics

The objective of the project was the development of production technology for different semiconducting materials for high-power and high-frequency electronics, including epitaxial structures based on SiC, GaN and InGaP-GaAs. In the framework of the project, VIGO Photonics S.A. developed MOCVD growth technology for epitaxial structures based on InGaP-GaAs.

Development of the growth technology of epitaxial structures for high-power and high-frequency devices, based on InGaP-GaAs compounds, was carried out using a production device AIX 2800 G4 (Aixtron). One of the most crucial challenges was the assessment of thermal conditions of the growth from the point of view of the effect of structure disordering and optimization of growth rate, as well as the maintaining ability of a repeatable chemical composition of InGaP layers, cross-matched to GaAs. The obtained heterostructures are characterized by high homogeneity and high structural quality and enable use in power devices.

The recipients of the project results are  electronic companies producing primarily devices – transistors and manufacturers of electronic systems. An additional benefit of the project is the possibility of using its results in the production of other epitaxial structures, such as solar cells.

Products (structures based on InGaP compounds) developed as the result of the implementation of the project results have been included in the standard VIGO offer, which includes a wide spectrum of infrared detectors.