We manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.
Detectors based on HgCdTe material that offer the highest performance out of all discovered materials suitable for Infrared detection. Our detectors are optimized for MWIR (3-8μm) and LWIR (8-16μm) spectral ranges. It is perfect for creating gas sensors for industry and environmental protection. They are an ideal solution for CRDS, TDLAS or FTIR spectroscopy. Very high parameters of detection and speed of operation make them ideal for applications such as leak detection, transport safety or defense applications. We also offer InAs or InAsSb based detectors that are RoHS compliant and suitable for the consumer market.
Our modules (infrared detectors integrated with electronics) are characterized by high sensitivity in a wide spectral range from 1 to 16 μm, high speed in frequency bands up to 1 GHz, optimized amplification of the measured signal and operating temperatures in the range from 200 to 300 K. Our offer there are ready-made modules for applications such as gas analysis, temperature control in fast-moving objects, laser spectroscopy. We also have the option of configuring the infrared module to the needs of a specific application.
We have extensive research and development facilities and we constantly strive to develop new, unique technologies and products. We are constantly expanding the portfolio of our infrared detectors and modules. We also offer the possibility of testing devices that are in the prototype stage. Find out more about the products our engineers and scientists are currently working on.