We manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.

GaAs based products

  • QW edge emitting lasers
  • VCSELs
  • FETs, HEMTs, Schottky diodes
  • varactors
  • GaAsP/GaAs
  • strained QW edge emitting lasers
  • InGaAsP/GaAs
  • QW lasers 808nm
  • InGaAs/AlGaAs/GaAs
  • strained QW lasers
  • InAs/GaAs
  • QD lasers
  • AlGaAs/GaAs
  • passive waveguides
  • Manufactured to specification

    InP based products

  • strained or matched QW edge emitting
    lasers and SOAs 1300 - 1600nm
  • InGaAs/InP
  • QW edge emitting lasers
  • InGaAsP/InP
  • VCSEL structures
  • InAlGaAs/InP
  • edge emitting and VCSEL structures
  • InGaAsP/InP
  • passive devices
  • InGaAs
  • photodetectors
  • InAlAs/InGaAs/InP
  • HEMTs
  • Manufactured to specification
    VCSEL Epi-Structure

    VCSEL Epi-Structure

    VCSEL is a semiconductor laser diode comprised of epitaxial layers grown on n-type GaAs or InP substrates by molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). The VCSEL structure consists of Fabry-Perot cavity (resonator) including an active region with several quantum wells, where light is generated, and top and bottom DBRs (Distributed Bragg Reflector). DBR is composed of stack of semiconductor layers (each with a thickness of a quarter of the laser wavelength) that reflect a particular range of light wavelengths. The emitted light leaves the device in a direction perpendicular to its surface.

    World class R&D expertise

    We offer extensive research and development services. Whether you are at the concept stage of your product design, need innovative upgrades to your existing products or seek out-of-the-box solutions our R&D capabilities can help you seize new opportunities, bring your operation to the highest level of performance and add value to your investment. We also provide our clients with technological support in carrying out R&D projects and propose new methods and approaches for producing highly successful epitaxial structures.

    InGaAs Wafers

    The so-called InGaAs material refers to a complete epitaxial stack composed of a variety of layers, with InGaAs forming the key part – the absorption – and being responsible for the material’s optical properties. The InGaAs layer itself is a III-V semiconductor that belongs to the family of In(x)Ga(1-x)As(y)P(1-y). For binary GaAs, InP, GaP, or InAs, the x and y are set to 0 or 1. In quaternary InGaAsP and ternary InGaAs a variety of x and y values are possible, and each combination will tune the semiconductor to different applications.

    If you need Evaluation Units, please contact us.