Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the ciodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. These detectors are cadmium and mercury free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market.
Engineering Samples
Image |
Name |
Cooling |
Immersion |
Peak wavelength λpeak, µm |
Detectivity D*(λpeak), cm·Hz1/2/W |
Time constant τ, ns |
Package |
Datasheet |
|---|
All InAs and InAsSb Photovoltaic Detectors
Image |
Name |
Cooling |
Immersion |
Peak wavelength λpeak, µm |
Detectivity D*(λpeak), cm·Hz1/2/W |
Time constant τ, ns |
Package |
Datasheet |
|---|
