HgCdTe (MCT) Photoconductive DetectorPC-10.6

1.0 – 12.0 µm, ambient temperature

PC-10.6 is uncooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λ_opt = 10.6 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise.

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Features

High performance in the 1.0 – 12.0 µm spectral range

Ambient temperature operation

Active area from 50×50 µm^2 to 4×4 mm^2

Long lifetime and MTBF

Stability and reliability

1/f noise

Specification (T_a = 20°C)

Parameter	PC-10.6
Active element material	epitaxial HgCdTe heterostructure
Optimum wavelength λ_opt, µm	10.6
*Detectivity D(λ_peak, 20 kHz), cm⋅Hz^1/2/W**	≥1.9×10⁷
*Detectivity D(λ_opt, 20 kHz), cm⋅Hz^1/2/W**	≥9.0×10⁶
Current responsivity-active area length product R_i(λ_opt)·L, A·mm/W	≥0.001
Time constant τ, ns	≤3
1/f noise corner frequency f_c, Hz	≤20k
Bias voltage-active area length ratio V_b/L, V/mm	≤3.0
Resistance R, Ω	≤120
Active area A, mm×mm	0.05×0.05, 0.1×0.1, 0.25×0.25, 0.5×0.5, 1×1, 2×2, 3×3
Package	TO39	BNC
Acceptance angle, Φ	~90°	~102° ^) ~124° ^*)
Window	none
^) Aperture C = Ø4 mm. ^*) Aperture C = Ø6 mm.