HgCdTe (MCT) Photoconductive Detector

1.0 – 16.0 µm three-stage thermoelectrically cooled

PC-4TE-14 is four-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 14.0 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

Spectral response (Ta = 20°C)

Features

  • High performance in the 1.0 - 16.0 µm spectral range
  • Four-stage thermoelectrically cooled
  • Hyperhemiimmersion microlens technology applied
  • Active area from 50×50 µm^2 to 2×2 mm^2
  • Long lifetime and MTBF
  • Stability and reliability
  • 1/f noise

Specification (Ta = 20°C)

Parameter
PC-4TE-14
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
14.0
Detectivity D*(λpeak, 20 kHz) cm⋅Hz1/2/W
≥1.0×108
Detectivity D*(λopt, 20 kHz) cm⋅Hz1/2/W
≥6.0×107
Current responsivity-active area length product Riopt)·L, A·mm/W
≥0.007
Time constant τ, ns
≤5
1/f noise corner frequency fc, Hz
≤20k
Bias voltage-active area length ratio Vb/L, V/mm
≤2.25
Resistance R, Ω
≤300
Active element temperature Tdet, K
~195
Active area A, mm×mm
0.05×0.05, 0.1×0.1, 0.25×0.25, 0.5×0.5, 1×1, 2×2
Package
TO8, TO66
Acceptance angle, Φ
~70°
Window
wZnSeAR

Mechanical layout, mm

Dedicated preamplifiers

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