PCI-2TE-13

HgCdTe (MCT) Photoconductive Detector

1.0 – 15.0 µm, two-stage thermoelectrically cooled, optically immersed

PCI-2TE-13 is two-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λ_opt = 13.0 μm. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

DATASHEET

Spectral response (Ta = 20°C)

Features

High performance in the 1.0 - 15.0 µm spectral range
Two-stage thermoelectrically cooled
Hyperhemiimmersion microlens technology applied
Long lifetime and MTBF
Stability and reliability
1/f noise

Specification (Ta = 20°C)

Parameter	PCI-2TE-13
Active element material	epitaxial HgCdTe heterostructure
Optimum wavelength λ_opt, µm	13.0
*Detectivity D(λ_peak, 20 kHz), cm⋅Hz^1/2/W**	≥4.0×10⁸
*Detectivity D(λ_opt, 20 kHz), cm⋅Hz^1/2/W**	≥2.3×10⁸
Current responsivity-optical area length product R_i(λ_opt)·L_O, A·mm/W	≥0.03
Time constant τ, ns	≤2
1/f noise corner frequency f_c, Hz	≤20k
Bias voltage-optical area length ratio V_b/L_O, V/mm	≤0.18
Resistance R, Ω	≤150
Active element tempearture T_det, K	~230
Optical area A_O, mm×mm	0.5×0.5, 1×1, 2×2
Package	TO8, TO66
Acceptance angle, Φ	~36°
Window	wZnSeAR