HgCdTe (MCT) Photoconductive Detectors

HgCdTe (MCT) Photoconductive Detector

1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed

PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

ORDER

Spectral response (Ta = 20°C)

Features

  • High responsivity in wide spectral range from 1.0 to 14.0 µm
  • Three-stage thermoelectrically cooled
  • Hyperhemiimmersion microlens technology applied
  • Large dynamic range
  • Excellent long term stability and reliability
  • Quantity discounted price
  • Fast delivery

Applications

  • FTIR spectroscopy and spectrometry

Specification (Ta = 20°C)

Parameter
PCI-3TE-12-1×1-TO8-wZnSeAR-36
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%), µm
≤2.0
Peak wavelength λpeak, µm
10.0±0.2
Optimum wavelength λopt, µm
12.0
Cut-off wavelength λcut-off (10%), µm
14.0±0.2
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W
≥1.6×109
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
≥9.0×108
Current responsivity Ripeak), A/W
≥0.11
Current responsivity Riopt), A/W
≥0.07
Time constant τ, ns
≤5
Resistance R, Ω
≤300
Bias voltage Vb, V
≤1.8
1/f noise corner frequency fc, kHz
≤20
Active element temperature Tdet, K
~210
Optical area AO, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~36°
Window
wZnSeAR

Mechanical layout, mm

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