PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
Parameter |
PCI-3TE-12-1×1-TO8-wZnSeAR-36 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Cut-on wavelength λcut-on (10%), µm
|
≤2.0 | |
|
Peak wavelength λpeak, µm
|
10.0±0.2 | |
|
Optimum wavelength λopt, µm
|
12.0 |
|
|
Cut-off wavelength λcut-off (10%), µm
|
14.0±0.2 | |
Detectivity D*(λpeak, 20 kHz), cm ⋅Hz1/2/W |
≥1.6×109
|
|
|
Detectivity D*(λopt, 20 kHz), cm
⋅Hz1/2/W |
≥9.0×108
|
|
|
Current responsivity Ri(λpeak), A/W
|
≥0.11
|
|
|
Current responsivity Ri(λopt), A/W
|
≥0.07
|
|
|
Time constant τ, ns
|
≤5 |
|
|
Resistance R, Ω
|
≤300 | |
|
Bias voltage Vb, V
|
≤1.8 | |
|
1/f noise corner frequency fc, kHz
|
≤20 | |
|
Active element temperature Tdet, K
|
~210 | |
|
Optical area AO, mm×mm
|
1×1 |
|
|
Package
|
TO8 | |
|
Acceptance angle, Φ
|
~36° | |
|
Window
|
wZnSeAR |
|
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