HgCdTe (MCT) Photoconductive Detector

1.0 – 12.0 µm, four-stage thermoelectrically cooled, optically immersed

PCI-4TE-10.6 is four-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 10.6 μm. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

Spectral response (Ta = 20°C)

Features

  • High performance in the 1.0 - 12.0 µm spectral range
  • Four-stage thermoelectrically cooled
  • Hyperhemiimmersion microlens technology applied
  • Long lifetime and MTBF
  • Stability and reliability
  • 1/f noise

Specification (Ta = 20°C)

Parameter
PCI-4TE-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W
≥4.0×109
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
≥3.0×109
Current responsivity-optical area length product Riopt)·LO, A·mm/W
≥0.2
Time constant τ, ns
≤30
1/f noise corner frequency fc, Hz
≤20k
Bias voltage-optical area length ratio Vb/LO, V/mm
≤0.24
Resistance R, Ω
≤400
Active element tempearture Tdet, K
~195
Optical area AO, mm×mm
0.5×0.5, 1×1, 2×2
Package
TO8, TO66
Acceptance angle, Φ
~36°
Window
wZnSeAR

Mechanical layout, mm

Dedicated preamplifiers

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