HgCdTe (MCT) Photoconductive Detector

1.0 – 10.2 µm, four-stage thermoelectrically cooled, optically immersed

PCI-4TE-9 is four-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 9.0 μm. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

Spectral response (Ta = 20°C)


  • High performance in the 1.0 - 10.2 µm spectral range
  • Four-stage thermoelectrically cooled
  • Hyperhemiimmersion microlens technology applied
  • Long lifetime and MTBF
  • Stability and reliability
  • 1/f noise

Specification (Ta = 20°C)

Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
Current responsivity-optical area length product Riopt)·LO, A·mm/W
Time constant τ, ns
1/f noise corner frequency fc, Hz
Bias voltage-optical area length ratio Vb/LO, V/mm
Resistance R, Ω
Active element tempearture Tdet, K
Optical area AO, mm×mm
0.5×0.5, 1×1, 2×2
TO8, TO66
Acceptance angle, Φ

Mechanical layout, mm

Dedicated preamplifiers

Read more
Read more
Read more
Read more

If you need Evaluation Units, please contact us.