PEM-10.6

HgCdTe (MCT) Photovoltaic Detector

2.0 – 12.0 µm, ambient temperature, photoelectromagnetic

PEM-10.6 is an uncooled HgCdTe photovoltaic IR detector based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution.

DATASHEET

Spectral response (Ta = 20°C)

Features

Spectral range from 2.0 to 12.0 µm
Ambient temperature operation
No bias required
No 1/f noise
Operation from DC to high frequency
Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter	PEM-10.6
Active element material	epitaxial HgCdTe heterostructure
Optimum wavelength λ_opt, µm	10.6
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥2.0×10⁷
*Detectivity D(λ_opt), cm⋅Hz^1/2/W**	≥1.0×10⁷
Current responsivity-active area product R_i(λ_opt)·L, A·mm/W	≥0.002
Time constant τ, ns	≤1.2
Resistance R, Ω	≥40
Active area A, mm×mm	1×1, 2×2
Package	PEM-SMA	PEM-TO8
Acceptance angle, Φ	~48°	~52°
Window	wZnSeAR

Mechanical layout, mm

PEM-SMA package

PEM-TO8 package

Dedicated preamplifier

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PEM-10.6

HgCdTe (MCT) Photovoltaic Detector

2.0 – 12.0 µm, ambient temperature, photoelectromagnetic

Spectral response (Ta = 20°C)

Features

Specification (Ta = 20°C)

Parameter

PEM-10.6

Mechanical layout, mm

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