HgCdTe (MCT) Photovoltaic Detector

2.0 – 12.0 µm, ambient temperature, optically immersed, photoelectromagnetic

PEMI-10.6 is an uncooled HgCdTe photovoltaic optically immersed IR detectors based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution.

Spectral response (Ta = 20°C)

Features

  • Spectral range from 2.0 to 12.0 µm
  • Ambient temperature operation
  • Hyperhemiimmersion microlens technology applied
  • No bias required
  • No 1/f noise
  • Operation from DC to high frequency
  • Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter
PEMI-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥1.6×108
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.0×108
Current responsivity-optical area product Riopt)·LO, A·mm/W
≥0.01
Time constant τ, ns
≤1.2
Resistance R, Ω
40 to 100
Optical area AO, mm×mm
1×1, 2×2
Package
PEM-SMA, PEM-TO8
Acceptance angle, Φ
~36°
Window
wZnSeAR

Mechanical layout, mm

Dedicated preamplifier

Read more

If you need Evaluation Units, please contact us.