HgCdTe (MCT) Photovoltaic Detector

2.3 – 4.2 µm, three-stage thermoelectrically cooled

PV-3TE-4 is three-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

Spectral response (Ta = 20°C, Vb = 0 mV)


  • High performance in the 2.3 - 4.2 µm spectral range
  • Three-stage thermoelectrically cooled
  • No bias required
  • No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
Detectivity D*(λpeak), cm⋅Hz1/2/W
Detectivity D*(λopt), cm⋅Hz1/2/W
Current responsivity Riopt), A/W
Time constant τ, ns
Resistance-active area product R⋅A, Ω⋅cm2
Active element temperature Tdet, K
Active area A, mm×mm
0.05×0.05, 0.1×0.1
TO8, TO66
Acceptance angle, Φ

Mechanical layout, mm

Dedicated preamplifiers

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If you need Evaluation Units, please contact us.