PV-3TE-8

HgCdTe (MCT) Photovoltaic Detector

3.3 – 8.6 µm, three-stage thermoelectrically cooled

PV-3TE-8 is three-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λ_opt = 8.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias V_b may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

DATASHEET

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

High performance in the 3.3 - 8.6 µm spectral range
Three-stage thermoelectrically cooled
No bias required
No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter	PV-3TE-8.0
Active element material	epitaxial HgCdTe heterostructure
Optimum wavelength λ_opt, µm	8.0
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥5.0×10⁸
*Detectivity D(λ_opt), cm⋅Hz^1/2/W**	≥3.0×10⁸
Current responsivity R_i(λ_opt), A/W	≥1.0
Time constant τ, ns	≤45
Resistance-active area product R⋅A, Ω⋅cm²	≥0.0004
Active element temperature T_det, K	~210
Active area A, mm×mm	0.05×0.05, 0.1×0.1
Package	TO8, TO66
Acceptance angle, Φ	~70°
Window	wZnSeAR