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HgCdTe (MCT) Photoconductive DetectorPV-3
2.3 – 3.2 µm, ambient temperature
PV-3 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 3.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.
Features
High performance in the 2.3 – 3.2 µm spectral range
Ambient temperature operation
No bias required
No 1/f noise
Specification (Ta = 20°C, Vb = 0 mV)
Parameter |
PV-3 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
3.0 |
|
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥8.0×109
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥6.5×109
|
|
|
Current responsivity Ri(λopt), A/W
|
≥0.5
|
|
|
Time constant τ, ns
|
≤350 |
|
|
Resistance-active area product R⋅A, Ω⋅cm2
|
≥1 |
|
|
Active area A, mm×mm
|
0.05×0.05, 0.1×0.1 |
|
|
Package
|
TO39 | BNC |
|
Acceptance angle, Φ
|
~90° | ~102° |
|
Window
|
none |
|
Spectral response (Ta = 20°C, Vb = 0 mV)
Mechanical layout, mm
BNC package
TO39 package
Access to file
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Application notes
Temperature sensor characteristics
Dedicated preamplifiers
Contact form
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