InAsSb Photovoltaic Detector

2.3 – 4.9 µm, two-stage thermoelectrically cooled

PVA-2TE-4.5-1×1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs1-xSbx alloy. 3° wedged sapphire window (wAl2O3) prevents unwanted interference effects. This detector does not contain mercury or cadmium and is compliant with the RoHS Directive.

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

  • High performance in the 2.3 - 4.9 µm spectral range
  • Two-stage thermoelectrically cooled
  • Excellent linearity
  • No bias required
  • No 1/f noise
  • Environmentally friendly

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVA-2TE-4.5-1×1-TO8-wAl2O3-70
Active element material
epitaxial InAsSb heterostructure
Cut-on wavelength λcut-on (10%), µm
2.3±0.2
Peak wavelength λpeak , µm
4.0±0.3
Cut-off wavelength λcut-off (10%), µm
4.9±0.2
Detectivity D*(λpeak), cm⋅Hz1/2/W
~7.0×109
Current responsivity Ripeak), A/W
~1.1
Time constant τ, ns
~10
Resistance R, Ω
~60
Active element temperature Tdet, K
~230K
Active area A, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~70°
Window
wAl2O3

Mechanical layout, mm

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