HgCdTe (MCT) Photovoltaic Detector

2.9 – 5.5 µm, ambient temperature, optically immersed

PVI-2TE-5-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5.0 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

ORDER

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

  • High performance in 2.9 - 5.5 µm spectral range
  • Two-stage thermoelctrically cooled
  • Hyperhemiimmersion microlens technology applied
  • No bias required
  • No 1/f noise
  • D* better by one order of magnitude compared with the same type uncooled detector
  • Wide dynamic range
  • Quantity discounted price
  • Fast delivery

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVI-2TE-5-1×1-TO8-wAl2O3-36
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%) µm
2.9±1.0
Peak wavelength λpeak, µm
4.2±0.5
Optimum wavelength λopt, µm
5.0
Cut-off wavelength λcut-off (10%) µm
5.5±0.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥2.0×1011
Detectivity D*(λopt), cm⋅Hz1/2/W
≥9.0×1010
Current responsivity Ripeak), A/W
≥2.0
Current responsivity Riopt), A/W
≥1.3
Time constant τ, ns
≤80
Resistance R, Ω
≥1000
Active element temperature Tdet, K
~230
Optical area AO, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~36°
Window
wAl2O3

Mechanical layout, mm

If you need Evaluation Units, please contact us.