PVI-2TE-6-1×1-TO8-wZnSeAR-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
Parameter |
PVI-2TE-6-1×1-TO8-wZnSeAR-36 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Cut-on wavelength λcut-on (10%) µm
|
3.0±1.0 | |
|
Peak wavelength λpeak, µm
|
5.2±0.5 | |
|
Optimum wavelength λopt, µm
|
6.0 |
|
|
Cut-off wavelength λcut-off (10%) µm
|
6.7±0.3 | |
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥7.0×1010
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥4.0×1010
|
|
|
Current responsivity Ri(λpeak), A/W
|
≥2.7
|
|
|
Current responsivity Ri(λopt), A/W
|
≥1.5
|
|
|
Time constant τ, ns
|
≤50 |
|
|
Resistance R, Ω
|
≥200 |
|
|
Active element temperature Tdet, K
|
~230 | |
|
Optical area AO, mm×mm
|
1×1 |
|
|
Package
|
TO8 | |
|
Acceptance angle, Φ
|
~36° | |
|
Window
|
wZnSeAR |
|
If you need Evaluation Units, please contact us.
Sign up for VIGO Newsletter
INVESTOR RELATIONS
