HgCdTe (MCT) Photovoltaic Detector

3.0 – 6.7 µm, two-stage thermoelectrically cooled, optically immersed

PVI-2TE-6-1×1-TO8-wZnSeAR-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

ORDER

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

  • High performance in 3.0 - 6.7 µm spectral range
  • Two-stage thermoelctrically cooled
  • Hyperhemiimmersion microlens technology applied
  • No bias required
  • No 1/f noise
  • Wide dynamic range
  • Versatility
  • Quantity discounted price
  • Fast delivery

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVI-2TE-6-1×1-TO8-wZnSeAR-36
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%) µm
3.0±1.0
Peak wavelength λpeak, µm
5.2±0.5
Optimum wavelength λopt, µm
6.0
Cut-off wavelength λcut-off (10%) µm
6.7±0.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥7.0×1010
Detectivity D*(λopt), cm⋅Hz1/2/W
≥4.0×1010
Current responsivity Ripeak), A/W
≥2.7
Current responsivity Riopt), A/W
≥1.5
Time constant τ, ns
≤50
Resistance R, Ω
≥200
Active element temperature Tdet, K
~230
Optical area AO, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~36°
Window
wZnSeAR

Mechanical layout, mm

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