PVI-4

HgCdTe (MCT) Photovoltaic Detector

2.4 – 4.4 µm, ambient temperature, optically immersed

PVI-4 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λ_opt = 4.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias V_b may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

DATASHEET

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

High performance in the 2.4 - 4.4 µm spectral range
Ambient temperature operation
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter	PVI-4
Active element material	epitaxial HgCdTe heterostructure
Optimum wavelength λ_opt, µm	4.0
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥3.0×10¹⁰
*Detectivity D(λ_opt), cm⋅Hz^1/2/W**	≥2.0×10¹⁰
Current responsivity R_i(λ_opt), A/W	≥1.0
Time constant τ, ns	≤150
Resistance-optical area product R⋅A_O, Ω⋅cm²	≥6
Optical area A_O, mm×mm	0.5×0.5, 1×1
Package	TO39, BNC
Acceptance angle, Φ	~36°
Window	none

Mechanical layout, mm

BNC package

TO39 package

Dedicated preamplifier

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PVI-4

HgCdTe (MCT) Photovoltaic Detector

2.4 – 4.4 µm, ambient temperature, optically immersed

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

Specification (Ta = 20°C, Vb = 0 mV)

Parameter

PVI-4

Mechanical layout, mm

Related documents

Dedicated preamplifier

SIP-TO39 series