HgCdTe (MCT) Photovoltaic Detector

2.4 – 4.4 µm, ambient temperature, optically immersed

PVI-4 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 4.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

Spectral response (Ta = 20°C, Vb = 0 mV)


  • High performance in the 2.4 - 4.4 µm spectral range
  • Ambient temperature operation
  • Hyperhemiimmersion microlens technology applied
  • No bias required
  • No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
Detectivity D*(λpeak), cm⋅Hz1/2/W
Detectivity D*(λopt), cm⋅Hz1/2/W
Current responsivity Riopt), A/W
Time constant τ, ns
Resistance-optical area product R⋅AO, Ω⋅cm2
Optical area AO, mm×mm
0.5×0.5, 1×1
Acceptance angle, Φ

Mechanical layout, mm

Dedicated preamplifier

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