HgCdTe (MCT) Photovoltaic Detector

2.4 – 5.5 µm, ambient temperature, optically immersed

PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

ORDER

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

  • 2.4 - 5.5 µm spectral range
  • Ambient temperature operation
  • Hyperhemiimmersion microlens technology applied
  • No bias required
  • No 1/f noise
  • Convenient to use
  • Very small size
  • Cost-effective solution
  • Quantity discounted price
  • Fast delivery

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVI-5-1×1-TO39-NW-36
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%) µm
2.4±0.5
Peak wavelength λpeak, µm
4.2±0.5
Optimum wavelength λopt, µm
5.0
Cut-off wavelength λcut-off (10%) µm
5.5±0.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥3.0×1010
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.0×1010
Current responsivity Ripeak), A/W
≥2.0
Current responsivity Riopt), A/W
≥1.0
Time constant τ, ns
≤150
Resistance R, Ω
≥100
Optical area AO, mm×mm
1×1
Package
TO39
Acceptance angle, Φ
~36°
Window
none

Mechanical layout, mm

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