InAsSb Photovoltaic Detector

2.6 – 5.3 µm, two-stage thermoelectrically cooled

PVIA-2TE-5-1×1-TO8-wAl2O3-36 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device.  It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

  • High performance in the 2.6- 5.3 µm spectral range
  • Two-stage thermoelectrically cooled
  • Complying with the RoHS Directive
  • Hyperhemiimmersion microlens technology applied
  • No bias required
  • No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVIA-2TE-5-1×1-TO8-wAl2O3-36
Active element material
epitaxial InAs heterostructure
Cut-on wavelength λcut-on (10%), µm
≤2.6
Peak wavelength λpeak , µm
4.5±0.6
Cut-off wavelength λcut-off (10%), µm
≥5.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥4.0×1010
Current responsivity Ripeak), A/W
≥1.2
Time constant τ, ns
≤5
Resistance R, Ω
≥1.0k
Active element temperature Tdet, K
~230K
Optical area AO, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~36°
Window
wAl2O3

Mechanical layout, mm

Dedicated preamplifiers

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