InAsSb Photovoltaic Detector

2.6 – 5.3 µm, ambient temperature, optically immersed

PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does not contain mercury or cadmium and is complying with the RoHS Directive.

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

  • High performance in the 2.3- 5.3 µm spectral range
  • Ambient temperature operation
  • Complying with the RoHS Directive
  • Hyperhemiimmersion microlens technology applied
  • No bias required
  • No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVIA-5-1×1-TO39-NW-36
Active element material
epitaxial InAsSb heterostructure
Cut-on wavelength λcut-on (10%), µm
≤2.6
Peak wavelength λpeak , µm
4.5±0.6
Cut-off wavelength λcut-off (10%), µm
≥5.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥5.0×109
Current responsivity Ripeak), A/W
≥1.2
Time constant τ, ns
≤15
Resistance R, Ω
≥70
Optical area AO, mm×mm
1×1
Package
TO39
Acceptance angle, Φ
~36°
Window
none

Mechanical layout, mm

Dedicated preamplifier

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