PVIA-5-1×1-TO39-NW-36

InAsSb Photovoltaic Detector

2.6 – 5.3 µm, ambient temperature, optically immersed

PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does not contain mercury or cadmium and is complying with the RoHS Directive.

DATASHEET

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

High performance in the 2.3- 5.3 µm spectral range
Ambient temperature operation
Complying with the RoHS Directive
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter	PVIA-5-1×1-TO39-NW-36
Active element material	epitaxial InAsSb heterostructure
Cut-on wavelength λ_cut-on(10%), µm	≤2.6
Peak wavelength λ_peak, µm	4.5±0.6
Cut-off wavelength λ_cut-off(10%), µm	≥5.3
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥5.0×10⁹
Current responsivity R_i(λpeak), A/W	≥1.2
Time constant τ, ns	≤15
Resistance R, Ω	≥70
Optical area A_O, mm×mm	1×1
Package	TO39
Acceptance angle, Φ	~36°
Window	none

Mechanical layout, mm

TO39 package

Dedicated preamplifier

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PVIA-5-1×1-TO39-NW-36

InAsSb Photovoltaic Detector

2.6 – 5.3 µm, ambient temperature, optically immersed

Spectral response (Ta = 20°C, Vb = 0 mV)

Features

Specification (Ta = 20°C, Vb = 0 mV)

Parameter

PVIA-5-1×1-TO39-NW-36

Mechanical layout, mm

Related documents

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