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HgCdTe (MCT) Photovoltaic DetectorPVM-10.6-1×1-TO39-NW-90

2.0 – 12.0 µm, ambient temperature, multiple junction

PVM-10.6-1×1-TO39-NW-90 is uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation.

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Features

Wide spectral range from 2.0 to 12.0 µm

Large active area 1×1 mm^2

Ambient temperature operation

No bias required

No 1/f noise

Short time constant ≤ 1.5 ns

Operation from DC to high frequency

Sensitive to IR radiation polarisation

Convenient to use

Versatility

Very small size

Cost-effective solution

Quantity discounted price

Fast delivery

Applications

CO2 laser (10.6 µm) measurements

Laser power monitoring and control

Laser beam profiling and positioning

Laser calibration

Dentistry

Specification (Ta = 20°C)

Parameter
PVM-10.6-1×1-TO39-NW-90
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%) µm
≤2.0
Peak wavelength λpeak, µm
8.5±1.5
Optimum wavelength λopt, µm
10.6
Cut-off wavelength λcut-off (10%) µm
≥12.0
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥2.0×107
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.0×107
Current responsivity Ripeak), A/W
≥0.004
Current responsivity Riopt), A/W
≥0.002
Time constant τ, ns
≤1.5
Resistance R, Ω
≥30
Active area A, mm×mm
1×1
Package
TO39
Acceptance angle, Φ
~90°
Window
none

Spectral response (Ta = 20°C)

PVM-10.6-1x1-TO39-NW-90

Mechanical layout, mm

TO39-non-imm-1

TO39 package

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Temperature sensor characteristics

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