HgCdTe (MCT) Photovoltaic Detector

2.0 – 12.0 µm, two-stage thermoelectrically cooled, multiple junction

PVM-2TE-10.6-1×1-TO8-wZnSeAR-70 is two-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

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Spectral response (Ta = 20°C)

Features

  • Wide spectral range from 2.0 to 12.0 µm
  • Large active area 1×1 mm^2
  • Two-stage thermoelectrically cooled
  • No bias required
  • No 1/f noise
  • Operation from DC to high frequency
  • Sensitive to IR radiation polarisation
  • Versatility
  • Quantity discounted price
  • Fast delivery

Specification (Ta = 20°C)

Parameter
PVM-2TE-10.6-1×1-TO8-wZnSeAR-70
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%) µm
≤2.0
Peak wavelength λpeak, µm
8.5±2.0
Optimum wavelength λopt, µm
10.6
Cut-off wavelength λcut-off (10%) µm
≥12.0
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥2.0×108
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.0×108
Current responsivity Ripeak), A/W
≥0.015
Current responsivity Riopt), A/W
≥0.01
Time constant τ, ns
≤4
Resistance R, Ω
≥90
Active element temperature Tdet, K
~230
Active area A, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~70°
Window
wZnSeAR

Mechanical layout, mm

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