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HgCdTe (MCT) Photovoltaic DetectorPVM-2TE-10.6
2.0 – 13.0 µm, two-stage thermoelectrically cooled, multiple junction
PVM-2TE-10.6 is two-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The detector is optimized for the maximum performance at λopt = 16.6 μm. It especially useful as large active area detector operating within 2.0 to 13.0 µm spectral range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
Features
Spectral range from 2.0 to 13.0 µm
Large active area from 1×1 mm^2 to 3×3 mm^2
Two-stage thermoelectrically cooled
No bias required
No 1/f noise
Sensitive to IR radiation polarisation
Specification (Ta = 20°C)
Parameter |
PVM-2TE-10.6 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
10.6 |
|
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥2.0×108
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥1.0×108
|
|
|
Current responsivity-active area product Ri(λopt)·L, A·mm/W
|
≥0.01
|
|
|
Time constant τ, ns
|
≤4 |
|
|
Resistance R, Ω
|
90 to 350 | |
|
Active element temperature Tdet, K
|
~230 | |
|
Active area A, mm×mm
|
1×1, 2×2 |
|
|
Package
|
TO8, TO66 | |
|
Acceptance angle, Φ
|
~70° | |
|
Window
|
wZnSeAR |
|
Spectral response (Ta = 20°C)
Mechanical layout, mm
2TE-TO8 package
2TE-TO66 package
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Application notes
Temperature sensor characteristics
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