home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe (MCT) Photovoltaic Detector PVM-8

HgCdTe (MCT) Photovoltaic DetectorPVM-8

2.0 – 9.0 µm, ambient temperature, multiple junction

PVM-8 is an uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The detector is optimized for the maximum performance at λopt = 8.0 μm. It especially useful as large active area detector operating within 2.0 to 9.0 µm spectral range.

Features

Spectral range from 2.0 to 9.0 µm

Large active area from 1×1 mm^2 to 4×4 mm^2

Ambient temperature operation

No bias required

No 1/f noise

Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter
PVM-8
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
8.0
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥1.2×108
Detectivity D*(λopt), cm⋅Hz1/2/W
≥6.0×107
Current responsivity-active area product Riopt)·L, A·mm/W
≥0.008
Time constant τ, ns
≤4
Resistance R, Ω
50 to 300
Active area A, mm×mm
1×1, 2×2, 3×3, 4×4
Package
TO39 BNC
Acceptance angle, Φ
~90° ~102°*)

~124°**)

Window
none

*)  Aperture C = Ø4 mm.

**)  Aperture C = Ø6 mm.

Spectral response (Ta = 20°C)

PVM-8-1

Mechanical layout, mm

BNC-non-imm-3

BNC package

TO39-non-imm-1-1

TO39 package

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