PVMI-2TE-10.6

HgCdTe (MCT) Photovoltaic Detector

2.0 – 13:0 µm, two-stage thermoelectrically cooled, optically immersed, multiple junction

PVMI-2TE-10.6 is two-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λ_opt = 10.6 μm. It especially useful as large active area detector operating within 2.0 to 13.0 µm spectral range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

DATASHEET

Spectral response (Ta = 20°C)

Features

Spectral range from 2.0 to 12.0 µm
Two-stage thermoelectrically cooled
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter	PVMI-2TE-10.6
Active element material	epitaxial HgCdTe heterostructure
Optimum wavelength λ_opt, µm	10.6
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥1.5×10⁹
*Detectivity D(λ_opt), cm⋅Hz^1/2/W**	≥1.0×10⁹
Current responsivity R_i(λ_opt), A/W	≥0.1
Time constant τ, ns	≤3
Resistance R, Ω	90 to 350
Active element temperature T_det, K	~230
Optical area A_O, mm×mm	1×1
Package	TO8, TO66
Acceptance angle, Φ	~36°
Window	wZnSeAR