HgCdTe (MCT) Photovoltaic Detector

2.0 – 8.5 µm, ambient temperature, multiple junction, optically immersed

PVMI-8 is an uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 8.0 μm. It especially useful as large active area detector operating within 2.0 to 8.5 µm spectral range.

Spectral response (Ta = 20°C)

Features

  • Spectral range from 2.0 to 8.5 µm
  • Ambient temperature operation
  • Hyperhemiimmersion microlens technology applied
  • No bias required
  • No 1/f noise
  • Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter
PVMI-8
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
8.0
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥6.0×108
Detectivity D*(λopt), cm⋅Hz1/2/W
≥3.0×108
Current responsivity-optical area product Riopt)·LO, A·mm/W
≥0.04
Time constant τ, ns
≤4
Resistance R, Ω
50 to 300
Optical area AO, mm×mm
1×1
Package
TO39, BNC
Acceptance angle, Φ
~36°
Window
none

Mechanical layout, mm

Dedicated preamplifier

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