We manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.

GaAs based products

  • QW edge emitting lasers
  • VCSELs
  • FETs, HEMTs, Schottky diodes
  • varactors
  • GaAsP/GaAs
  • strained QW edge emitting lasers
  • InGaAsP/GaAs
  • QW lasers 808nm
  • InGaAs/AlGaAs/GaAs
  • strained QW lasers
  • InAs/GaAs
  • QD lasers
  • AlGaAs/GaAs
  • passive waveguides
  • Manufactured to specification

    InP based products

  • strained or matched QW edge emitting
    lasers and SOAs 1300 - 1600nm
  • InGaAs/InP
  • QW edge emitting lasers
  • InGaAsP/InP
  • VCSEL structures
  • InAlGaAs/InP
  • edge emitting and VCSEL structures
  • InGaAsP/InP
  • passive devices
  • InGaAs
  • photodetectors
  • InAlAs/InGaAs/InP
  • HEMTs
  • Manufactured to specification

    World class R&D expertise

    We offer extensive research and development services. Whether you are at the concept stage of your product design, need innovative upgrades to your existing products or seek out-of-the-box solutions our R&D capabilities can help you seize new opportunities, bring your operation to the highest level of performance and add value to your investment. We also provide our clients with technological support in carrying out R&D projects and propose new methods and approaches for producing highly successful epitaxial structures.

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