HgCdTe (MCT) Photoconductive Detectors
Photoconductive detectors based on the photoconductive effect. Infrared radiation generates charge carriers in the semiconductor active region decreasing its resistance. The resistance change is sensed as a current change by applying a constant voltage bias. The devices are characterized by near linear current-voltage characteristics. The electric field in photoconductors is constant across the device.
HgCdTe (MCT) Photovoltaic Detectors
Photovoltaic detectors (photodiodes) are semiconductor structures with one (PV) or multiple (PVM) , homo- or heterojunctions. Absorbed photons produce charge carriers that are collected at the contacts, resulting in external photocurrent. Photodiodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. Reverse bias voltage is frequently applied to increase responsivity, differential resistance, reduce the shot noise, improve high frequency performance and increase the dynamic range.
InAs/InAsSb Photovoltaic Detectors
Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the ciodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. These detectors are cadmium and mercury free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market.
HgCdTe (MCT) Arrays
Infrared detectors in which the active surface consists of more than two elements. The offer includes quadrant geometry detectors based on photodiodes and photoconductors. Ideally suited for defense and security applications, and XY or differential measurements.