Photovoltaic detectors (photodiodes) are semiconductor structures with one (PV) or multiple (PVM) , homo- or heterojunctions. Absorbed photons produce charge carriers that are collected at the contacts, resulting in external photocurrent. Photodiodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. Reverse bias voltage is frequently applied to increase responsivity, differential resistance, reduce the shot noise, improve high frequency performance and increase the dynamic range.

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PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability.

The device is optimized for the maximum performance at 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

Image
Name
 order
Cooling
Immersion
Optimal wavelength
λopt, µm
Detectivity D*(λopt),
cm·Hz1/2/W
Package
Time constant τ, ns
Datasheet

All HgCdTe (MCT) Photovoltaic Detectors:

Image
Name
 order
Cooling
Immersion
Optimal wavelength
λopt, µm
Detectivity D*(λopt),
cm·Hz1/2/W
Package
Time constant τ, ns
Datasheet

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